A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

摘要

We report on a new approach for positioning of self-assembled InAs quantumdots on (110) GaAs with nanometer precision. By combining self-assembly ofquantum dots with molecular beam epitaxy on in-situ cleaved surfaces(cleaved-edge overgrowth) we have successfully fabricated arrays of long-rangeordered InAs quantum dots. Both atomic force microscopy andmicro-photoluminescence measurements demonstrate the ability to control size,position, and ordering of the quantum dots. Furthermore, single dotphotoluminescence investigations confirm the high optical quality of thequantum dots fabricated.